The most important difference between the p-n diode and the Schottky diode is the reverse recovery time (trr), when the diode switches from the conducting to the non-conducting state. In a p&#;n diode, the reverse recovery time can be in the order of several microseconds to less than 100ns for fast diodes. Schottky diodes do not have a recovery time, as there is nothing to recover from (i.e., there is no charge carrier depletion region at the junction). The switching time is ~100ps (pico-seconds) for the small-signal diodes, and up to tens of nanoseconds for special high-capacity power diodes. With p&#;n-junction switching, there is also a reverse recovery current, which in high-power semiconductors brings increased EMI noise. With Schottky diodes, switching is essentially "instantaneous" with only a slight capacitive loading, which is much less of a concern.

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This "instantaneous" switching is not always the case. In higher voltage Schottky devices, in particular, the guard ring structure needed to control breakdown field geometry creates a parasitic p-n diode with the usual recovery time attributes. As long as this guard ring diode is not forward biased, it adds only capacitance. If the Schottky junction is driven hard enough however, the forward voltage eventually will bias both diodes forward and actual trr will be greatly impacted.

Comparison of the advantages and disadvantages of Schottky diodes in power supplies

Comparison of the advantages and disadvantages of Schottky diodes in power supplies

The Schottky diode is named after its inventor, Dr. Schottky, and SBD is short for Schottky Barrier Diode (abbreviated SBD).

Unlike ordinary diodes, SBD is not made by the principle of PN junction formed by contact between P-type semiconductors and N-type semiconductors, but by the principle of metal-semiconductor junctions formed by metal-semiconductor contact.

Therefore, SBD, also known as metal-semiconductor (contact) diode or surface barrier diode, is a type of hot carrier diode.

Hot carriers are carriers that have a higher average kinetic energy than carriers in a zero electric field.

Schottky diodes are available in leaded and surface-mount (SMD) packages.

Schottky diodes in leaded packages are typically used as high-frequency, high-current rectifier, freewheeling, or protection diodes. It is available in both single-tube and double-diode (double-diode) packages.

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Schottky pair tubes have three pin exit methods: common negative (the negative pole of two tubes are connected), common positive (the positive pole of the two tubes is connected) and series connection (the positive pole of one diode is connected to the negative pole of the other diode).

Comparison of the advantages and disadvantages of Schottky diodes in power supplies:

Schottky diodes advantages:

1. Low voltage drop, small loss voltage.

2. Fast switching speed, small loss, suitable for high-frequency circuits.

Schottky diode disadvantages:

3. The reverse bias voltage is low and cannot withstand excessive reverse voltage.

4. Reverse leakage is positive temperature coefficient, when the temperature rises, IR reverse leakage will increase (this is a parameter that designers tend to ignore).

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